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@ARTICLE{Kutovyi:910297,
      author       = {Kutovyi, Yurii and Jansen, Marvin Marco and Qiao, Siqi and
                      Falter, Christine and von den Driesch, Nils and Brazda,
                      Thorsten and Demarina, Nataliya and Trellenkamp, Stefan and
                      Bennemann, Benjamin and Grützmacher, Detlev and Pawlis,
                      Alexander},
      title        = {{E}fficient {S}ingle-{P}hoton {S}ources {B}ased on
                      {C}hlorine-{D}oped {Z}n{S}e {N}anopillars with {G}rowth
                      {C}ontrolled {E}mission {E}nergy},
      journal      = {ACS nano},
      volume       = {16},
      number       = {9},
      issn         = {1936-0851},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2022-03732},
      pages        = {14582 - 14589},
      year         = {2022},
      abstract     = {Isolated impurity states in epitaxially grown semiconductor
                      systems possess important radiative features such as
                      distinct wavelength emission with a very short radiative
                      lifetime and low inhomogeneous broadening, which make them
                      promising for the generation of indistinguishable single
                      photons. In this study, we investigate chlorine-doped
                      ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as
                      a highly efficient solid-state single-photon source
                      operating at cryogenic temperatures. We show that single
                      photons are generated due to the radiative recombination of
                      excitons bound to neutral Cl atoms in ZnSe QW and the energy
                      of the emitted photon can be tuned from about 2.85 down to
                      2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm.
                      Following the developed advanced technology, we fabricate
                      NPs with a diameter of about 250 nm using a combination of
                      dry and wet-chemical etching of epitaxially grown
                      ZnSe/ZnMgSe QW structures. The remaining resist mask serves
                      as a spherical- or cylindrical-shaped solid immersion lens
                      on top of NPs and leads to the emission intensity
                      enhancement by up to an order of magnitude in comparison to
                      the pillars without any lenses. NPs with spherical-shaped
                      lenses show the highest emission intensity values. The clear
                      photon-antibunching effect is confirmed by the measured
                      value of the second-order correlation function at a zero
                      time delay of 0.14. The developed single-photon sources are
                      suitable for integration into scalable photonic circuits.},
      cin          = {PGI-9 / HNF / PGI-2 / PGI-10},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)HNF-20170116 /
                      I:(DE-Juel1)PGI-2-20110106 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5224 - Quantum Networking (POF4-522) / DFG project
                      337456818 - Entwicklung von Spin-Qubit Bauelementen aus
                      ZnSe/(Zn,Mg)Se Quantenstrukturen (337456818)},
      pid          = {G:(DE-HGF)POF4-5224 / G:(GEPRIS)337456818},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {36095839},
      UT           = {WOS:000855572900001},
      doi          = {10.1021/acsnano.2c05045},
      url          = {https://juser.fz-juelich.de/record/910297},
}