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@ARTICLE{Tappertzhofen:910428,
      author       = {Tappertzhofen, S. and Nielen, L. and Valov, I. and Waser,
                      R.},
      title        = {{M}emristively programmable transistors},
      journal      = {Nanotechnology},
      volume       = {33},
      number       = {4},
      issn         = {0957-4484},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2022-03817},
      pages        = {045203 -},
      year         = {2022},
      abstract     = {When designing the gate-dielectric of a
                      floating-gate-transistor, one must make a tradeoff between
                      the necessity of providing an ultra-small leakage current
                      behavior for long state retention, and a moderate to high
                      tunneling-rate for fast programming speed. Here we report on
                      a memristively programmable transistor that overcomes this
                      tradeoff. The operation principle is comparable to
                      floating-gate-transistors, but the advantage of the analyzed
                      concept is that ions instead of electrons are used for
                      programming. Since the mass of ions is significantly larger
                      than the effective mass of electrons, gate-dielectrics with
                      higher leakage current levels can be used. We demonstrate
                      the practical feasibility of the device using a
                      proof-of-concept study based on a micrometer-sized thin-film
                      transistor and LT-Spice simulations of 32 nm transistors.
                      Memristively programmable transistors have the potential of
                      high programming endurance and retention times, fast
                      programming speeds, and high scalability.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {34670198},
      UT           = {WOS:000714982600001},
      doi          = {10.1088/1361-6528/ac317f},
      url          = {https://juser.fz-juelich.de/record/910428},
}