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@ARTICLE{Bui:910522,
      author       = {Bui, Minh and Rost, Stefan and Auge, Manuel and Tu,
                      Jhih-Sian and zhou, lanqing and Aguilera, Irene and Blügel,
                      Stefan and Ghorbani-Asl, Mahdi and Krasheninnikov, Arkady V.
                      and Hashemi, Arsalan and Komsa, Hannu-Pekka and Jin, Lei and
                      Kibkalo, Lidia and O’Connell, Eoghan N. and Ramasse,
                      Quentin M. and Bangert, Ursel and Hofsäss, Hans C. and
                      Grützmacher, Detlev and Kardynal, Beata},
      title        = {{L}ow-energy {S}e ion implantation in {M}o{S}2 monolayers},
      journal      = {npj 2D materials and applications},
      volume       = {6},
      number       = {1},
      issn         = {2397-7132},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2022-03905},
      pages        = {42},
      year         = {2022},
      note         = {Volkswagenstigftung project 93425 "New single photon
                      sources by engineering monolayer-thick semiconductors on the
                      atomic scale".},
      abstract     = {In this work, we study ultra-low energy implantation into
                      MoS2 monolayers to evaluate the potential of the technique
                      in two-dimensional materials technology. We use 80Se+ ions
                      at the energy of 20 eV and with fluences up to
                      5.0·1014 cm−2. Raman spectra of the implanted films
                      show that the implanted ions are predominantly incorporated
                      at the sulfur sites and MoS2−2xSe2x alloys are formed,
                      indicating high ion retention rates, in agreement with the
                      predictions of molecular dynamics simulations of Se ion
                      irradiation on MoS2 monolayers. We found that the ion
                      retention rate is improved when implantation is performed at
                      an elevated temperature of the target monolayers.
                      Photoluminescence spectra reveal the presence of defects,
                      which are mostly removed by post-implantation annealing at
                      200 °C, suggesting that, in addition to the Se atoms in
                      the substitutional positions, weakly bound Se adatoms are
                      the most common defects introduced by implantation at this
                      ion energy.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC / PGI-9},
      ddc          = {670},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$ /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5211 - Topological Matter (POF4-521) / 5224 - Quantum
                      Networking (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5211 / G:(DE-HGF)POF4-5224},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000814256800001},
      doi          = {10.1038/s41699-022-00318-4},
      url          = {https://juser.fz-juelich.de/record/910522},
}