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@ARTICLE{RaeisHosseini:910578,
author = {Raeis-Hosseini, Niloufar and Chen, Shaochuan and
Papavassiliou, Christos and Valov, Ilia},
title = {{I}mpact of {Z}r top electrode on tantalum oxide-based
electrochemical metallization resistive switching memory:
towards synaptic functionalities},
journal = {RSC Advances},
volume = {12},
number = {22},
issn = {2046-2069},
address = {London},
publisher = {RSC Publishing},
reportid = {FZJ-2022-03956},
pages = {14235 - 14245},
year = {2022},
cin = {PGI-7 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {5233 - Memristive Materials and Devices (POF4-523)},
pid = {G:(DE-HGF)POF4-5233},
typ = {PUB:(DE-HGF)16},
pubmed = {35558855},
UT = {WOS:000793320700001},
doi = {10.1039/D2RA02456J},
url = {https://juser.fz-juelich.de/record/910578},
}