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@ARTICLE{Hsiang:910579,
author = {Hsiang, Hsing-I and Tsai, Huei-Ru and Pithan, Christian},
title = {{E}ffects of {S}r({C}o, {N}b, {T}a){O} 3 addition on the
defect structures and electrical properties of {Z}n{O}-based
varistors},
journal = {Journal of materials chemistry / C},
volume = {10},
number = {25},
issn = {2050-7526},
address = {London [u.a.]},
publisher = {RSC},
reportid = {FZJ-2022-03957},
pages = {9644 - 9654},
year = {2022},
cin = {PGI-7 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {5233 - Memristive Materials and Devices (POF4-523)},
pid = {G:(DE-HGF)POF4-5233},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000814259700001},
doi = {10.1039/D2TC01701F},
url = {https://juser.fz-juelich.de/record/910579},
}