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001     910579
005     20230123110710.0
024 7 _ |a 10.1039/D2TC01701F
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024 7 _ |a 2050-7526
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024 7 _ |a 2050-7534
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024 7 _ |a 2128/32323
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037 _ _ |a FZJ-2022-03957
082 _ _ |a 530
100 1 _ |a Hsiang, Hsing-I
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245 _ _ |a Effects of Sr(Co, Nb, Ta)O 3 addition on the defect structures and electrical properties of ZnO-based varistors
260 _ _ |a London ˜[u.a.]œ
|c 2022
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536 _ _ |a 5233 - Memristive Materials and Devices (POF4-523)
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700 1 _ |a Tsai, Huei-Ru
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700 1 _ |a Pithan, Christian
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773 _ _ |a 10.1039/D2TC01701F
|g Vol. 10, no. 25, p. 9644 - 9654
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|t Journal of materials chemistry / C
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|y 2022
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856 4 _ |u https://juser.fz-juelich.de/record/910579/files/d2tc01701f.pdf
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