%0 Journal Article
%A Han, Yi
%A Sun, Jingxuan
%A Xi, Fengben
%A Bae, Jin-Hee
%A Grützmacher, Detlev
%A Zhao, Qing-Tai
%T Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs
%J Solid state electronics
%V 194
%@ 0038-1101
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M FZJ-2022-04212
%P 108351 -
%D 2022
%Z Bitte Post-print ergänzen
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000804752300010
%R 10.1016/j.sse.2022.108351
%U https://juser.fz-juelich.de/record/910862