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@ARTICLE{Han:910862,
      author       = {Han, Yi and Sun, Jingxuan and Xi, Fengben and Bae, Jin-Hee
                      and Grützmacher, Detlev and Zhao, Qing-Tai},
      title        = {{C}ryogenic characteristics of {UTBB} {SOI}
                      {S}chottky-{B}arrier {MOSFET}s},
      journal      = {Solid state electronics},
      volume       = {194},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2022-04212},
      pages        = {108351 -},
      year         = {2022},
      note         = {Bitte Post-print ergänzen},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      422581876 - Kryogene CMOS Technologie für die Realisierung
                      von von klassischen QuBit-Kontrollschaltkreisen},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000804752300010},
      doi          = {10.1016/j.sse.2022.108351},
      url          = {https://juser.fz-juelich.de/record/910862},
}