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@ARTICLE{Liao:910864,
      author       = {Liao, Liping and Kovalska, Evgeniya and Luxa, Jan and
                      Dekanovsky, Lukáš and Mazanek, Vlastimil and Valdman,
                      Lukáš and Wu, Bing and Huber, Štěpán and Mikulics,
                      Martin and Sofer, Zdenek},
      title        = {{U}nraveling the {M}echanism of the {P}ersistent
                      {P}hotoconductivity in {I}n{S}e and its {D}oped
                      {C}ounterparts},
      journal      = {Advanced optical materials},
      volume       = {10},
      number       = {20},
      issn         = {2195-1071},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-04214},
      pages        = {2200522 -},
      year         = {2022},
      abstract     = {Dopant levels in layered compound InSe have considerable
                      potential in optoelectronic devices. Dopant-induced trap
                      states are essential in determining the optoelectrical
                      properties of semiconductors. However, detailed studies of
                      the persistent photoconductivity (PPC) and related mechanism
                      in doped InSe are still not available. Here, the dependence
                      of excitation energy on the shallow donor level caused by
                      the dopants (Ge, Sn) in InSe is systematically investigated.
                      Notably, prolonged decay time originates from extrinsic Ge,
                      Sn dopants and these doping-assisted states improve the
                      optoelectrical performance of pristine InSe. Those
                      photogenerated carriers are trapped in the Ge, Sn shallow
                      impurities states, which are long-lived enough to be
                      extracted into Au contacts before annihilation. This renders
                      Ge-, Sn-doped InSe photoconductive gain and maximized
                      photocurrent. Sn-doped InSe single crystal device can
                      achieve a maximum responsivity of around 1.7 × 106 A W−1
                      under red light and detectivity of 6.18 × 1013 Jones. In
                      addition, Hall measurements identify the carrier
                      concentration and the Hall mobility of pristine InSe is
                      significantly changed by Ge and Sn dopants. It is
                      demonstrated that doping Ge, Sn atoms is responsible for the
                      obvious photoconductivity and beneficial for the
                      high-performance photodetector, offering intriguing
                      opportunities for novel holographic memory applications.},
      cin          = {ER-C-2 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)ER-C-2-20170209 / $I:(DE-82)080009_20140620$},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000832655300001},
      doi          = {10.1002/adom.202200522},
      url          = {https://juser.fz-juelich.de/record/910864},
}