% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Buca:910865,
      author       = {Buca, Dan and Bjelajac, Andjelika and Spirito, Davide and
                      Concepción, Omar and Gromovyi, Maksym and Sakat, Emilie and
                      Lafosse, Xavier and Ferlazzo, Laurence and von den Driesch,
                      Nils and Ikonic, Zoran and Grützmacher, Detlev and
                      Capellini, Giovanni and El Kurdi, Moustafa},
      title        = {{R}oom {T}emperature {L}asing in {G}e{S}n {M}icrodisks
                      {E}nabled by {S}train {E}ngineering},
      journal      = {Advanced optical materials},
      volume       = {10},
      number       = {22},
      issn         = {2195-1071},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-04215},
      pages        = {2201024 -},
      year         = {2022},
      abstract     = {The success of GeSn alloys as active material for infrared
                      lasers could pave the way toward a monolithic technology
                      that can be manufactured within mainstream silicon
                      photonics. Nonetheless, for operation on chip, lasing should
                      occur at room temperature or beyond. Unfortunately, despite
                      the intense research in recent years, many hurdles have yet
                      to be overcome. An approach exploiting strain engineering to
                      induce large tensile strain in micro-disk made of GeSn alloy
                      with Sn content of $14 at\%$ is presented here. This method
                      enables robust multimode laser emission at room temperature.
                      Furthermore, tensile strain enables proper valence band
                      engineering; as a result, over a large range of operating
                      temperatures, lower lasing thresholds are observed compared
                      to high Sn content GeSn lasers operating at similar
                      wavelength.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000842331600001},
      doi          = {10.1002/adom.202201024},
      url          = {https://juser.fz-juelich.de/record/910865},
}