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@ARTICLE{Valov:9109,
author = {Valov, I. and Rührup, V. and Klein, R. and Rödel, T.-C.
and Stork, A. and Berendts, S. and Dogan, M. and Wiemhöfer,
H.-D. and Lerch, M. and Janek, J.},
title = {{I}onic and electronic conductivity of nitrogen-doped {YSZ}
single crystals},
journal = {Solid state ionics},
volume = {180},
issn = {0167-2738},
address = {Amsterdam [u.a.]},
publisher = {Elsevier Science},
reportid = {PreJuSER-9109},
year = {2009},
note = {Record converted from VDB: 12.11.2012},
abstract = {The ionic and electronic charge transport was studied for
single crystals of 9.5 $mol\%$ yttria-stabilized zirconia
with additional nitrogen doping (YSZ:N) of up to 7.5 $at.\%$
(referred to the anion sublattice and formula unit
Zr0.83Y0.17O1.91) as a function of temperature and nitrogen
content. The total conductivity being almost equivalent to
the oxygen ion conductivity has been measured by AC
impedance spectroscopy under vacuum conditions in order to
prevent re-oxidation and loss of nitrogen. The electronic
conductivity has been determined by Hebb-Wagner polarization
using ion-blocking Pt microelectrodes in N-2 atmosphere. The
ionic conductivity of YSZ:N decreases in the presence of
nitrogen at intermediate temperatures up to 1000 degrees C.
The mean activation energy of ionic conduction strongly
increases with increasing nitrogen content, from 1.0 eV for
nitrogen-free YSZ up to 1.9 eV for YSZ containing 7.3
$at.\%$ N. Compared to nitrogen-free YSZ, the electronic
conductivity first decreases at nitrogen contents of 2.17
and 5.80 $at.\%,$ but then increases again for a sample with
7.53 at X At temperatures of 850 degrees C and above, the
presence of the N3- dopant fixes the electrode potential and
thus the oxygen partial pressure at the Pt electrode to very
low values. This corresponds to a pinning of the Fermi level
at a relatively high energy in the upper half of the band
gap. At 7.53 $at.\%$ N and 950 degrees C, the oxygen partial
pressure in YSZ:N corresponds to p(O2) = 3x10(-18) bar. At
temperatures above 850 degrees C, even in the presence of a
very small oxygen concentration in the surrounding gas
phase, the nitrogen ion dopant becomes highly mobile and
thus diffuses to the surface where it is oxidized to gaseous
N-2. The results are discussed in terms of the ionic and
electronic defect structures and the defect mobilities in
YSZ:N. (C) 2009 Elsevier B.V. All rights reserved.},
keywords = {J (WoSType)},
cin = {IFF-6 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Chemistry, Physical / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000272817800005},
doi = {10.1016/j.ssi.2009.09.003},
url = {https://juser.fz-juelich.de/record/9109},
}