Home > Publications database > Simulation of Switching Processes Inside Bilayer Valence Change Memory Cells by a Drift-Diffusion Model
 
Conference Presentation (Other) FZJ-2022-04492
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Simulation of Switching Processes Inside Bilayer Valence Change Memory Cells by a Drift-Diffusion Model

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2022

Deutsche Physikalische Tagung, DPG, RegensburgRegensburg, Germany, 4 Sep 2022 - 9 Sep 20222022-09-042022-09-09

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
  2. BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
  3. BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2022
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2022-11-09, last modified 2022-11-10
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