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@ARTICLE{Wang:911204,
      author       = {Wang, Lina and Song, Qizhen and Pei, Fengtao and Chen,
                      Yihua and Dou, Jie and Wang, Hao and Shi, Congbo and Zhang,
                      Xiao and Fan, Rundong and Zhou, Wentao and Qiu, Zhiwen and
                      Kang, Jiaqian and Wang, Xueyun and Lambertz, Andreas and
                      Sun, Mengru and Niu, Xiuxiu and Ma, Yue and Zhu, Cheng and
                      Zhou, Huanping and Hong, Jiawang and Bai, Yang and Duan,
                      Weiyuan and Ding, Kaining and Chen, Qi},
      title        = {{S}train {M}odulation for {L}ight‐{S}table n–i–p
                      {P}erovskite/{S}ilicon {T}andem {S}olar {C}ells},
      journal      = {Advanced materials},
      volume       = {34},
      number       = {26},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-04510},
      pages        = {2201315 -},
      year         = {2022},
      abstract     = {Perovskite/silicon tandem solar cells are promising to
                      penetrate photovoltaicmarket. However, the wide-bandgap
                      perovskite absorbers used in top-celloften suffer severe
                      phase segregation under illumination, which restricts
                      theoperation lifetime of tandem solar cells. Here, a strain
                      modulation strategyto fabricate light-stable
                      perovskite/silicon tandem solar cells is reported.
                      Byemploying adenosine triphosphate, the residual tensile
                      strain in the wide-bandgapperovskite absorber is
                      successfully converted to compressive strain,which mitigates
                      light-induced ion migration and phase segregation. Basedon
                      the wide-bandgap perovskite with compressive strain,
                      single-junctionsolar cells with the n–i–p layout yield a
                      power conversion efficiency (PCE) $of20.53\%$ with the
                      smallest voltage deficits of 440 mV. These cells also
                      $maintain83.60\%$ of initial PCE after 2500 h operation at
                      the maximum power point.Finally, these top cells are
                      integrated with silicon bottom cells in a monolithictandem
                      device, which achieves a PCE of $26.95\%$ and improved light
                      stabilityat open-circuit.},
      cin          = {IEK-5},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) /
                      Verbundvorhaben: Street - Einsatz von hocheffizienten
                      Solarzellen in elektrisch betriebenen Nutzfahrzeugen;
                      Teilvorhaben: Herstellung und Entwicklung von (0324275E) /
                      Touch - Technologie- und Charakterisierungsplattform für
                      die Entwicklung von hoch-effizienten
                      Silizium-Heterostruktursolarzellen (0324351)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324275E / G:(BMWi)0324351},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {35435280},
      UT           = {WOS:000796547500001},
      doi          = {10.1002/adma.202201315},
      url          = {https://juser.fz-juelich.de/record/911204},
}