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100 1 _ |a Wang, Lina
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245 _ _ |a Strain Modulation for Light‐Stable n–i–p Perovskite/Silicon Tandem Solar Cells
260 _ _ |a Weinheim
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520 _ _ |a Perovskite/silicon tandem solar cells are promising to penetrate photovoltaicmarket. However, the wide-bandgap perovskite absorbers used in top-celloften suffer severe phase segregation under illumination, which restricts theoperation lifetime of tandem solar cells. Here, a strain modulation strategyto fabricate light-stable perovskite/silicon tandem solar cells is reported. Byemploying adenosine triphosphate, the residual tensile strain in the wide-bandgapperovskite absorber is successfully converted to compressive strain,which mitigates light-induced ion migration and phase segregation. Basedon the wide-bandgap perovskite with compressive strain, single-junctionsolar cells with the n–i–p layout yield a power conversion efficiency (PCE) of20.53% with the smallest voltage deficits of 440 mV. These cells also maintain83.60% of initial PCE after 2500 h operation at the maximum power point.Finally, these top cells are integrated with silicon bottom cells in a monolithictandem device, which achieves a PCE of 26.95% and improved light stabilityat open-circuit.
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536 _ _ |a Verbundvorhaben: Street - Einsatz von hocheffizienten Solarzellen in elektrisch betriebenen Nutzfahrzeugen; Teilvorhaben: Herstellung und Entwicklung von (0324275E)
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536 _ _ |a Touch - Technologie- und Charakterisierungsplattform für die Entwicklung von hoch-effizienten Silizium-Heterostruktursolarzellen (0324351)
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700 1 _ |a Song, Qizhen
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700 1 _ |a Pei, Fengtao
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700 1 _ |a Chen, Yihua
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700 1 _ |a Dou, Jie
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700 1 _ |a Wang, Hao
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700 1 _ |a Shi, Congbo
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700 1 _ |a Zhang, Xiao
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700 1 _ |a Fan, Rundong
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700 1 _ |a Zhou, Wentao
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700 1 _ |a Qiu, Zhiwen
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700 1 _ |a Kang, Jiaqian
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700 1 _ |a Wang, Xueyun
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700 1 _ |a Lambertz, Andreas
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700 1 _ |a Sun, Mengru
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700 1 _ |a Niu, Xiuxiu
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700 1 _ |a Ma, Yue
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700 1 _ |a Zhu, Cheng
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700 1 _ |a Zhou, Huanping
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700 1 _ |a Hong, Jiawang
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700 1 _ |a Bai, Yang
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700 1 _ |a Ding, Kaining
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700 1 _ |a Chen, Qi
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773 _ _ |a 10.1002/adma.202201315
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