%0 Journal Article
%A Qiu, Depeng
%A Duan, Weiyuan
%A Lambertz, Andreas
%A Eberst, Alexander
%A Bittkau, Karsten
%A Rau, Uwe
%A Ding, Kaining
%T Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon
%J Solar RRL
%V 6
%N 10
%@ 2367-198X
%C Weinheim
%I Wiley-VCH
%M FZJ-2022-04511
%P 2200651
%D 2022
%X Mitigating the adverse effect of transparent conductive oxide (TCO) sputtering onthe passivation quality of the heterojunction contact is very critical for achievinghigh-efficiency silicon heterojunction (SHJ) solar cells. Herein, n-type ultra-thin(5 nm) nanocrystalline silicon (nc-Si:H) is utilized as a contact layer in rear-junctionSHJ solar cells. It is revealed that the TCO sputtering damage on the contact layer iscaused by the ion bombardment during the sputtering process and cannot be fullyrecovered by low-temperature annealing. A more severe passivation deteriorationis observed for the devices with nc-Si:H(n) having a higher microstructure factor.This result is explained by an increased ion penetration depth in the porous nc-Si:Hfilm. By applying denser nc-Si:H(n) in SHJ solar cells, the front silicon film stackshows more resilience to sputter damage, yielding a remarkable cell performanceon the M2-size wafer with certificated power conversion efficiency (η) of 23.87%.The sputter damage on nc-Si:H by TCO in SHJ solar cells is explored in depth forthe first time from the perspective of silicon thin films.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000845082600001
%R 10.1002/solr.202200651
%U https://juser.fz-juelich.de/record/911205