TY  - JOUR
AU  - Qiu, Depeng
AU  - Duan, Weiyuan
AU  - Lambertz, Andreas
AU  - Eberst, Alexander
AU  - Bittkau, Karsten
AU  - Rau, Uwe
AU  - Ding, Kaining
TI  - Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon
JO  - Solar RRL
VL  - 6
IS  - 10
SN  - 2367-198X
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2022-04511
SP  - 2200651
PY  - 2022
AB  - Mitigating the adverse effect of transparent conductive oxide (TCO) sputtering onthe passivation quality of the heterojunction contact is very critical for achievinghigh-efficiency silicon heterojunction (SHJ) solar cells. Herein, n-type ultra-thin(5 nm) nanocrystalline silicon (nc-Si:H) is utilized as a contact layer in rear-junctionSHJ solar cells. It is revealed that the TCO sputtering damage on the contact layer iscaused by the ion bombardment during the sputtering process and cannot be fullyrecovered by low-temperature annealing. A more severe passivation deteriorationis observed for the devices with nc-Si:H(n) having a higher microstructure factor.This result is explained by an increased ion penetration depth in the porous nc-Si:Hfilm. By applying denser nc-Si:H(n) in SHJ solar cells, the front silicon film stackshows more resilience to sputter damage, yielding a remarkable cell performanceon the M2-size wafer with certificated power conversion efficiency (η) of 23.87%.The sputter damage on nc-Si:H by TCO in SHJ solar cells is explored in depth forthe first time from the perspective of silicon thin films.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000845082600001
DO  - DOI:10.1002/solr.202200651
UR  - https://juser.fz-juelich.de/record/911205
ER  -