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@ARTICLE{Qiu:911205,
      author       = {Qiu, Depeng and Duan, Weiyuan and Lambertz, Andreas and
                      Eberst, Alexander and Bittkau, Karsten and Rau, Uwe and
                      Ding, Kaining},
      title        = {{T}ransparent {C}onductive {O}xide {S}puttering {D}amage on
                      {C}ontact {P}assivation in {S}ilicon {H}eterojunction
                      {S}olar {C}ells with {H}ydrogenated {N}anocrystalline
                      {S}ilicon},
      journal      = {Solar RRL},
      volume       = {6},
      number       = {10},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-04511},
      pages        = {2200651},
      year         = {2022},
      abstract     = {Mitigating the adverse effect of transparent conductive
                      oxide (TCO) sputtering onthe passivation quality of the
                      heterojunction contact is very critical for
                      achievinghigh-efficiency silicon heterojunction (SHJ) solar
                      cells. Herein, n-type ultra-thin(5 nm) nanocrystalline
                      silicon (nc-Si:H) is utilized as a contact layer in
                      rear-junctionSHJ solar cells. It is revealed that the TCO
                      sputtering damage on the contact layer iscaused by the ion
                      bombardment during the sputtering process and cannot be
                      fullyrecovered by low-temperature annealing. A more severe
                      passivation deteriorationis observed for the devices with
                      nc-Si:H(n) having a higher microstructure factor.This result
                      is explained by an increased ion penetration depth in the
                      porous nc-Si:Hfilm. By applying denser nc-Si:H(n) in SHJ
                      solar cells, the front silicon film stackshows more
                      resilience to sputter damage, yielding a remarkable cell
                      performanceon the M2-size wafer with certificated power
                      conversion efficiency (η) of $23.87\%.The$ sputter damage
                      on nc-Si:H by TCO in SHJ solar cells is explored in depth
                      forthe first time from the perspective of silicon thin
                      films.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) /
                      Verbundvorhaben: Street - Einsatz von hocheffizienten
                      Solarzellen in elektrisch betriebenen Nutzfahrzeugen;
                      Teilvorhaben: Herstellung und Entwicklung von (0324275E) /
                      Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die
                      Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von
                      Solarzellen mit passivierendem Tunnelkontakt und
                      funktionalen Schichten aus katalytischer und
                      plasmaunterstützter chemischer Gasphasenab (0324198D) /
                      Touch - Technologie- und Charakterisierungsplattform für
                      die Entwicklung von hoch-effizienten
                      Silizium-Heterostruktursolarzellen (0324351)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324275E / G:(BMWi)0324198D /
                      G:(BMWi)0324351},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000845082600001},
      doi          = {10.1002/solr.202200651},
      url          = {https://juser.fz-juelich.de/record/911205},
}