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| 001 | 911205 | ||
| 005 | 20240712084532.0 | ||
| 024 | 7 | _ | |a 10.1002/solr.202200651 |2 doi |
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| 100 | 1 | _ | |a Qiu, Depeng |0 P:(DE-Juel1)173822 |b 0 |
| 245 | _ | _ | |a Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon |
| 260 | _ | _ | |a Weinheim |c 2022 |b Wiley-VCH |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Mitigating the adverse effect of transparent conductive oxide (TCO) sputtering onthe passivation quality of the heterojunction contact is very critical for achievinghigh-efficiency silicon heterojunction (SHJ) solar cells. Herein, n-type ultra-thin(5 nm) nanocrystalline silicon (nc-Si:H) is utilized as a contact layer in rear-junctionSHJ solar cells. It is revealed that the TCO sputtering damage on the contact layer iscaused by the ion bombardment during the sputtering process and cannot be fullyrecovered by low-temperature annealing. A more severe passivation deteriorationis observed for the devices with nc-Si:H(n) having a higher microstructure factor.This result is explained by an increased ion penetration depth in the porous nc-Si:Hfilm. By applying denser nc-Si:H(n) in SHJ solar cells, the front silicon film stackshows more resilience to sputter damage, yielding a remarkable cell performanceon the M2-size wafer with certificated power conversion efficiency (η) of 23.87%.The sputter damage on nc-Si:H by TCO in SHJ solar cells is explored in depth forthe first time from the perspective of silicon thin films. |
| 536 | _ | _ | |a 1213 - Cell Design and Development (POF4-121) |0 G:(DE-HGF)POF4-1213 |c POF4-121 |f POF IV |x 0 |
| 536 | _ | _ | |a Verbundvorhaben: Street - Einsatz von hocheffizienten Solarzellen in elektrisch betriebenen Nutzfahrzeugen; Teilvorhaben: Herstellung und Entwicklung von (0324275E) |0 G:(BMWi)0324275E |c 0324275E |x 1 |
| 536 | _ | _ | |a Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D) |0 G:(BMWi)0324198D |c 0324198D |x 2 |
| 536 | _ | _ | |a Touch - Technologie- und Charakterisierungsplattform für die Entwicklung von hoch-effizienten Silizium-Heterostruktursolarzellen (0324351) |0 G:(BMWi)0324351 |c 0324351 |x 3 |
| 588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
| 700 | 1 | _ | |a Duan, Weiyuan |0 P:(DE-Juel1)169946 |b 1 |e Corresponding author |
| 700 | 1 | _ | |a Lambertz, Andreas |0 P:(DE-Juel1)130263 |b 2 |
| 700 | 1 | _ | |a Eberst, Alexander |0 P:(DE-Juel1)178007 |b 3 |
| 700 | 1 | _ | |a Bittkau, Karsten |0 P:(DE-Juel1)130219 |b 4 |
| 700 | 1 | _ | |a Rau, Uwe |0 P:(DE-Juel1)143905 |b 5 |u fzj |
| 700 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 6 |
| 773 | _ | _ | |a 10.1002/solr.202200651 |g Vol. 6, no. 10, p. 2200651 - |0 PERI:(DE-600)2882014-9 |n 10 |p 2200651 |t Solar RRL |v 6 |y 2022 |x 2367-198X |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/911205/files/Solar%20RRL%20-%202022%20-%20Qiu%20-%20Transparent%20Conductive%20Oxide%20Sputtering%20Damage%20on%20Contact%20Passivation%20in%20Silicon%20Heterojunction.pdf |y OpenAccess |
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