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@ARTICLE{Zhang:911385,
      author       = {Zhang, Fudong and Qi, Guanxiao and He, Mingkai and Zheng,
                      Fengshan and Jin, Lei and Peng, Zhanhui and Chao, Xiaolian
                      and Yang, Zupei and Wu, Di},
      title        = {{C}ontrasting roles of {B}i-doping and {B}i 2 {T}e 3
                      alloying on the thermoelectric performance of {S}n{T}e},
      journal      = {Inorganic chemistry frontiers},
      volume       = {9},
      number       = {21},
      issn         = {2052-1545},
      address      = {Cambridge},
      publisher    = {RSC},
      reportid     = {FZJ-2022-04668},
      pages        = {5562 - 5571},
      year         = {2022},
      abstract     = {Previous studies have revealed that both Bi doping and
                      Bi2Te3 alloying are successful strategies to optimize the
                      thermoelectric performance of SnTe; however, detailed and
                      thorough investigations on exactly how they differ in
                      modulating the band structure and microstructure were seldom
                      given. Through a systematic comparison between Bi-doped and
                      Bi2Te3-alloyed SnTe, we find in this work that despite the
                      fact that they both contribute to the valence band
                      convergence of SnTe, Bi2Te3 alloying induces little effect
                      on the hole concentration unlike the typical n-type feature
                      of Bi-doping; moreover, Bi2Te3 alloying tends to produce
                      dense dislocation arrays at micron-scale grain boundaries
                      which differs significantly from the substitutional point
                      defect character upon Bi-doping. It was then found that
                      Bi2Te3 alloying exhibits a relatively higher quality factor
                      (B ∼ μw/κlat) at higher temperatures than Bi-doping.
                      Subsequent Ge-doping in Bi2Te3-alloyed samples results in
                      further valence band convergence and hole concentration
                      optimization and eventually results in a maximum figure of
                      merit ZT of 1.4 at 873 K in the composition of
                      (Sn0.88Ge0.12Te)0.97-(BiTe1.5)0.03.},
      cin          = {ER-C-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000853004700001},
      doi          = {10.1039/D2QI01437H},
      url          = {https://juser.fz-juelich.de/record/911385},
}