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@ARTICLE{Petrychuk:912248,
      author       = {Petrychuk, Mykhailo and Vitusevich, Svetlana},
      title        = {{T}ransformation in low‐frequency noise spectra in
                      {G}a{N} {HEMT} in non‐equilibrium conditions},
      journal      = {Physica status solidi / A},
      volume       = {220},
      number       = {2},
      issn         = {0031-8965},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-05445},
      pages        = {.202200619},
      year         = {2023},
      abstract     = {It is known that flicker noise is the most intriguing noise
                      component because it can be found in any type of material,
                      object, device, or system. Despite the struggle of
                      scientists to find a mutual model for the 1/f flicker noise
                      law, there is still a challenge to describe the law in many
                      cases. Herein, the studies of two-level random telegraph
                      signal (RTS) fluctuations analyzed for the state-of-the-art
                      high-electron-mobility transistors (HEMTs), fabricated based
                      on AlGaN/GaN heterostructures, are presented. It is revealed
                      that the shape of the fluctuations can be used to describe
                      the formation of a spectrum with γ = 1, 2, 3. The data
                      demonstrate that the 1/f spectrum can be obtained as a
                      result of the interactions of the carriers in parallel
                      channels along the length of a system. Experimentally
                      registered RTS fluctuations have a spectrum described by
                      behavior. The data are in good agreement with the
                      theoretically predicted pulsed shape, allowing the
                      generation of a 1/f spectrum. Based on the data analysis and
                      the theoretical description of the fluctuations, the origin
                      of 1/f fluctuations in nonequilibrium conditions is
                      explained by interactions resulting in correlations of
                      carriers in two parallel channels as the common feature in
                      the HEMT devices.},
      cin          = {IBI-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IBI-3-20200312},
      pnm          = {5241 - Molecular Information Processing in Cellular Systems
                      (POF4-524)},
      pid          = {G:(DE-HGF)POF4-5241},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000900664100001},
      doi          = {10.1002/pssa.202200619},
      url          = {https://juser.fz-juelich.de/record/912248},
}