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000009158 084__ $$2WoS$$aPhysics, Applied
000009158 1001_ $$0P:(DE-Juel1)VDB67806$$aMenke, T.$$b0$$uFZJ
000009158 245__ $$aImpact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells
000009158 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2009
000009158 300__ $$a114507
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000009158 440_0 $$03051$$aJournal of Applied Physics$$v106$$x0021-8979$$y11
000009158 500__ $$aWe thank R. M,nstermann, M. Waters, K. Shibuya, and R. Bruchhaus for helpful discussion and the critical reading of the manuscript. This work was financially supported by Intel Corp., Santa Clara.
000009158 520__ $$aIn this work, the results of our detailed investigations on the electroforming procedure in Pt/SrTi0.99Fe0.01O3/SrTi0.99Nb0.01O3 [Pt/STO(Fe)/Nb:STO] metal-insulator-metal (MIM)-devices and its impact on the performance of resistive switching memory devices are presented. Questions about the exact location of the modifications triggered by the electroforming procedure within the investigated MIM-devices will be addressed. From a technological point of view, the thermal stability of formed devices becomes important. An increase in the device resistances during retention measurements has been observed indicating the presence of internal redistribution effects. These may result from an oxygen vacancy gradient induced by the forming process. However, these internal relaxation effects will not end up in the unformed state. Annealing experiments under defined atmospheric conditions allowed distinguishing between internal and external rediffusion effects. We found that SrTiO3 starts to interact with the surrounding atmosphere at moderate temperatures. The occurring external reoxidation effect set the device back to its initial (unformed) state. As a result, the investigated MIM-structures can no longer be regarded as closed systems and presented the large implication on the retention of such devices. The experimental findings are supported by calculations of the penetration depth of oxygen ions/vacancies in SrTiO3.
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000009158 65320 $$2Author$$aannealing
000009158 65320 $$2Author$$adiffusion
000009158 65320 $$2Author$$aelectroforming
000009158 65320 $$2Author$$aepitaxial layers
000009158 65320 $$2Author$$airon
000009158 65320 $$2Author$$aMIM devices
000009158 65320 $$2Author$$aplatinum
000009158 65320 $$2Author$$arandom-access storage
000009158 65320 $$2Author$$astrontium compounds
000009158 65320 $$2Author$$athermal stability
000009158 65320 $$2Author$$avacancies (crystal)
000009158 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b1$$uFZJ
000009158 7001_ $$0P:(DE-Juel1)130836$$aMeuffels, P.$$b2$$uFZJ
000009158 7001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b3$$uFZJ
000009158 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
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