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@ARTICLE{Menke:9158,
      author       = {Menke, T. and Dittmann, R. and Meuffels, P. and Szot, K.
                      and Waser, R.},
      title        = {{I}mpact of the electroforming process on the device
                      stability of epitaxial {F}e-doped {S}r{T}i{O}3 resistive
                      switching cells},
      journal      = {Journal of applied physics},
      volume       = {106},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-9158},
      pages        = {114507},
      year         = {2009},
      note         = {We thank R. M,nstermann, M. Waters, K. Shibuya, and R.
                      Bruchhaus for helpful discussion and the critical reading of
                      the manuscript. This work was financially supported by Intel
                      Corp., Santa Clara.},
      abstract     = {In this work, the results of our detailed investigations on
                      the electroforming procedure in
                      Pt/SrTi0.99Fe0.01O3/SrTi0.99Nb0.01O3 [Pt/STO(Fe)/Nb:STO]
                      metal-insulator-metal (MIM)-devices and its impact on the
                      performance of resistive switching memory devices are
                      presented. Questions about the exact location of the
                      modifications triggered by the electroforming procedure
                      within the investigated MIM-devices will be addressed. From
                      a technological point of view, the thermal stability of
                      formed devices becomes important. An increase in the device
                      resistances during retention measurements has been observed
                      indicating the presence of internal redistribution effects.
                      These may result from an oxygen vacancy gradient induced by
                      the forming process. However, these internal relaxation
                      effects will not end up in the unformed state. Annealing
                      experiments under defined atmospheric conditions allowed
                      distinguishing between internal and external rediffusion
                      effects. We found that SrTiO3 starts to interact with the
                      surrounding atmosphere at moderate temperatures. The
                      occurring external reoxidation effect set the device back to
                      its initial (unformed) state. As a result, the investigated
                      MIM-structures can no longer be regarded as closed systems
                      and presented the large implication on the retention of such
                      devices. The experimental findings are supported by
                      calculations of the penetration depth of oxygen
                      ions/vacancies in SrTiO3.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000272838600143},
      doi          = {10.1063/1.3267485},
      url          = {https://juser.fz-juelich.de/record/9158},
}