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024 7 _ |a 10.1063/1.3267485
|2 DOI
024 7 _ |a WOS:000272838600143
|2 WOS
024 7 _ |a 2128/17226
|2 Handle
037 _ _ |a PreJuSER-9158
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Menke, T.
|b 0
|u FZJ
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245 _ _ |a Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2009
300 _ _ |a 114507
336 7 _ |a Journal Article
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|y 11
|v 106
500 _ _ |a We thank R. M,nstermann, M. Waters, K. Shibuya, and R. Bruchhaus for helpful discussion and the critical reading of the manuscript. This work was financially supported by Intel Corp., Santa Clara.
520 _ _ |a In this work, the results of our detailed investigations on the electroforming procedure in Pt/SrTi0.99Fe0.01O3/SrTi0.99Nb0.01O3 [Pt/STO(Fe)/Nb:STO] metal-insulator-metal (MIM)-devices and its impact on the performance of resistive switching memory devices are presented. Questions about the exact location of the modifications triggered by the electroforming procedure within the investigated MIM-devices will be addressed. From a technological point of view, the thermal stability of formed devices becomes important. An increase in the device resistances during retention measurements has been observed indicating the presence of internal redistribution effects. These may result from an oxygen vacancy gradient induced by the forming process. However, these internal relaxation effects will not end up in the unformed state. Annealing experiments under defined atmospheric conditions allowed distinguishing between internal and external rediffusion effects. We found that SrTiO3 starts to interact with the surrounding atmosphere at moderate temperatures. The occurring external reoxidation effect set the device back to its initial (unformed) state. As a result, the investigated MIM-structures can no longer be regarded as closed systems and presented the large implication on the retention of such devices. The experimental findings are supported by calculations of the penetration depth of oxygen ions/vacancies in SrTiO3.
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653 2 0 |2 Author
|a annealing
653 2 0 |2 Author
|a diffusion
653 2 0 |2 Author
|a electroforming
653 2 0 |2 Author
|a epitaxial layers
653 2 0 |2 Author
|a iron
653 2 0 |2 Author
|a MIM devices
653 2 0 |2 Author
|a platinum
653 2 0 |2 Author
|a random-access storage
653 2 0 |2 Author
|a strontium compounds
653 2 0 |2 Author
|a thermal stability
653 2 0 |2 Author
|a vacancies (crystal)
700 1 _ |a Dittmann, R.
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700 1 _ |a Meuffels, P.
|b 2
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700 1 _ |a Szot, K.
|b 3
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700 1 _ |a Waser, R.
|b 4
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773 _ _ |a 10.1063/1.3267485
|g Vol. 106, p. 114507
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|0 PERI:(DE-600)1476463-5
|t Journal of applied physics
|v 106
|y 2009
|x 0021-8979
856 7 _ |u http://dx.doi.org/10.1063/1.3267485
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