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@INPROCEEDINGS{Otten:916926,
      author       = {Otten, Rene and Schreckenberg, Lea and Vliex, Patrick and
                      Ritzmann, Julian and Ludwig, Arne and Wieck, Andreas D. and
                      Bluhm, Hendrik},
      title        = {{Q}ubit control using a {CMOS} {DAC} at m{K} temperatures},
      school       = {RWTH Aachen University},
      reportid     = {FZJ-2023-00194},
      year         = {2022},
      abstract     = {Scaling up a quantum processor to tackle real-world
                      problems requires qubit numbers in the millions. Scaleable
                      semiconductor-based architectures have been proposed, many
                      of them relying on integrated control instead of
                      room-temperature electronics. However, it has not yet been
                      shown that this can be achieved. For developing a
                      high-density, low-cost wiring solution, it is highly
                      advantageous for the electronics to be placed at the same
                      temperature as the qubit chip. Therefore, tight integration
                      of the qubit chip with ultra low power CMOS electronics
                      presents a promising route. We demonstrate DC biasing qubit
                      electrodes using a custom-designed 65nm CMOS capacitive DAC
                      operating below 100mK [1]. Our chip features a complete
                      proof of principle solution including interface, DAC memory
                      and logic, the capacitive DAC, and sample-and-hold
                      structures to provide voltages for multiple qubit gates. The
                      bias DAC is combined with the qubit using a silicon
                      interposer chip, enabling flexible routing and tight
                      integration. Voltage stability, noise performance, and
                      temperature are benchmarked using the qubit chip. Our
                      results validate the potential of very low power qubit
                      biasing using highly integrated circuits.[1] P. Vliex et
                      al., IEEE Solid-State Circuits Letters, vol. 3, pp. 218-221,
                      2020},
      month         = {Mar},
      date          = {2022-03-14},
      organization  = {APS March Meeting 2022, Chicago (USA),
                       14 Mar 2022 - 18 Mar 2022},
      subtyp        = {After Call},
      cin          = {PGI-11 / ZEA-2},
      cid          = {I:(DE-Juel1)PGI-11-20170113 / I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {5221 - Advanced Solid-State Qubits and Qubit Systems
                      (POF4-522) / BMBF-13N16149 - QSolid (BMBF-13N16149)},
      pid          = {G:(DE-HGF)POF4-5221 / G:(DE-Juel1)BMBF-13N16149},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/916926},
}