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@ARTICLE{Nguyen:917322,
author = {Nguyen, Binh Duong and Roder, Melissa and Danilewsky,
Andreas and Steiner, Johannes and Wellmann, Peter and
Sandfeld, Stefan},
title = {{A}utomated analysis of {X}-ray topography of 4{H}-{S}i{C}
wafers: {I}mage analysis, numerical computations, and
artificial intelligence approaches for locating and
characterizing screw dislocations},
journal = {Journal of materials research},
volume = {38},
issn = {1092-8928},
address = {Berlin},
publisher = {Springer},
reportid = {FZJ-2023-00550},
pages = {1254-1265},
year = {2023},
abstract = {The physical vapor transport (PVT) crystal growth process
of 4H-SiC wafers is typically accompanied by the occurrence
of a large variety of defect types such as screw or edge
dislocations, and basal plane dislocations. In particular,
screw dislocations may have a strong negative influence on
the performance of electronic devices due to the large,
distorted or even hollow core of such dislocations.
Therefore, analyzing and understanding these types of
defects is crucial also for the production of high-quality
semiconductor materials. This work uses automated image
analysis to provide dislocation information for computing
the stresses and strain energy of the wafer. Together with
using a genetic algorithm this allows us to predict the
dislocation positions, the Burgers vector magnitudes, and
the most likely configuration of Burgers vector signs for
the dislocations in the wafer.},
cin = {IAS-9},
ddc = {670},
cid = {I:(DE-Juel1)IAS-9-20201008},
pnm = {5111 - Domain-Specific Simulation $\&$ Data Life Cycle Labs
(SDLs) and Research Groups (POF4-511)},
pid = {G:(DE-HGF)POF4-5111},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000911279200005},
doi = {10.1557/s43578-022-00880-z},
url = {https://juser.fz-juelich.de/record/917322},
}