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@ARTICLE{Grlich:9174,
      author       = {Gürlich, C. and Scharinger, S. and Weides, M. and
                      Kohlstedt, H. and Mints, R.G. and Goldobin, E. and Koelle,
                      D. and Kleiner, R.},
      title        = {{V}isualizing supercurrents in ferromagnetic {J}osephson
                      junctions with various arrangements of 0 and pi segments},
      journal      = {Physical review / B},
      volume       = {81},
      number       = {9},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-9174},
      pages        = {094502},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Josephson junctions with ferromagnetic barrier can have
                      positive or negative critical current depending on the
                      thickness d(F) of the ferromagnetic layer. Accordingly, the
                      Josephson phase in the ground state is equal to 0 (a
                      conventional or 0 junction) or to pi (pi junction). When 0
                      and pi segments are joined to form a "0-pi junction,"
                      spontaneous supercurrents around the 0-pi boundary can
                      appear. Here we report on the visualization of supercurrents
                      in superconductor-insulator-ferromagnet-superconductor
                      (SIFS) junctions by low-temperature scanning electron
                      microscopy (LTSEM). We discuss data for rectangular 0, pi,
                      0-pi, 0-pi-0, and 20 x (0-pi-) junctions, disk-shaped
                      junctions where the 0-pi boundary forms a ring, and an
                      annular junction with two 0-pi boundaries. Within each 0 or
                      pi segment the critical current density is fairly
                      homogeneous, as indicated both by measurements of the
                      magnetic field dependence of the critical current and by
                      LTSEM. The pi parts have critical current densities j(c)(pi)
                      up to 35 A/cm(2) at T = 4.2 K, which is a record value for
                      SIFS junctions with a NiCu F-layer so far. We also
                      demonstrate that SIFS technology is capable to produce
                      Josephson devices with a unique topology of the 0-pi
                      boundary.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000276207300091},
      doi          = {10.1103/PhysRevB.81.094502},
      url          = {https://juser.fz-juelich.de/record/9174},
}