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@ARTICLE{Lbke:917491,
      author       = {Lübke, Dana and Hartnagel, Paula and Hülsbeck, Markus and
                      Kirchartz, Thomas},
      title        = {{U}nderstanding the {T}hickness and {L}ight-{I}ntensity
                      {D}ependent {P}erformance of {G}reen-{S}olvent {P}rocessed
                      {O}rganic {S}olar {C}ells},
      journal      = {ACS materials Au},
      volume       = {3},
      number       = {3},
      issn         = {2694-2461},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2023-00704},
      pages        = {215-230},
      year         = {2023},
      abstract     = {For indoor light harvesting, the adjustable band gap of
                      molecular semiconductors is a significant advantage relative
                      to many inorganic photovoltaic technologies. However,
                      several challenges have to be overcome that include
                      processability in nonhalogenated solvents, sufficiently high
                      thicknesses (>250 nm) and high efficiencies at illuminances
                      typically found in indoor environments. Here, we report on
                      the development and application of new methods to quantify
                      and identify performance losses based on thickness- and
                      intensity-dependent current density–voltage measurements.
                      Furthermore, we report on the fabrication of solar cells
                      based on the blend PBDB-T:F-M processed in the
                      nonhalogenated solvent o-xylene. In the low-intensity
                      regime, insufficiently high shunt resistances limit the
                      photovoltaic performance and by analyzing current density
                      voltage–curves for solar cells with various shunt
                      resistances we find that ∼100 kΩ cm2 are required at 200
                      lux. We provide a unified description of fill factor losses
                      introducing the concept of light-intensity-dependent
                      apparent shunts that originate from incomplete and
                      voltage-dependent charge collection. In experiment and
                      simulation, we show that good fill factors are associated
                      with a photo-shunt inversely scaling with intensity.
                      Intensity regions with photo-shunt resistances close to the
                      dark-shunt resistance are accompanied by severe extraction
                      losses. To better analyze recombination, we perform a
                      careful analysis of the light intensity and thickness
                      dependence of the open-circuit voltage and prove that
                      trap-assisted recombination dominates the recombination
                      losses at low light intensities.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121) / 1215 -
                      Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212 / G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001011308100001},
      doi          = {10.1021/acsmaterialsau.2c00070},
      url          = {https://juser.fz-juelich.de/record/917491},
}