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| Hauptseite > Publikationsdatenbank > The influence of the first nucleation states on electronic in-gap states of HfO2 nanoislands > print |
| Hauptseite > Publikationsdatenbank > The influence of the first nucleation states on electronic in-gap states of HfO2 nanoislands > print |
| 001 | 917494 | ||
| 005 | 20230310131404.0 | ||
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| 100 | 1 | _ | |a Schmidt, Niclas |0 P:(DE-Juel1)179230 |b 0 |u fzj |
| 111 | 2 | _ | |a ECOSS 35 University of Luxembourg |c Luxembourg |d 2022-08-29 - 2022-09-02 |w Luxembourg |
| 245 | _ | _ | |a The influence of the first nucleation states on electronic in-gap states of HfO2 nanoislands |
| 260 | _ | _ | |c 2022 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
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