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000009176 084__ $$2WoS$$aPhysics, Applied
000009176 1001_ $$0P:(DE-Juel1)VDB61380$$aNauenheim, C.$$b0$$uFZJ
000009176 245__ $$aInvestigation of the electroforming process in resistively switching TiO_2 nanocrosspoint junctions
000009176 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000009176 300__ $$a122902
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000009176 440_0 $$0562$$aApplied Physics Letters$$v96$$x0003-6951$$y12
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000009176 520__ $$aWe report on the electroforming in resistively switching nanocrosspoint devices made of a reactively sputtered TiO2 thin film between Pt and Ti/Pt electrodes, respectively. As most resistance switching materials, TiO2 needs to be electroformed before it can be switched. This paper presents and compares current and voltage controlled electroforming with regard to the polarity. We show that a current-driven electroforming with negative polarities leads into the switchable high resistive state without need for a current compliance. These devices show an improved stability and reliability in bipolar resistive switching performance.
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000009176 65320 $$2Author$$aelectrical conductivity transitions
000009176 65320 $$2Author$$aelectrical resistivity
000009176 65320 $$2Author$$aelectroforming
000009176 65320 $$2Author$$ametal-semiconductor-metal structures
000009176 65320 $$2Author$$ananostructured materials
000009176 65320 $$2Author$$aplatinum
000009176 65320 $$2Author$$asemiconductor thin films
000009176 65320 $$2Author$$atitanium
000009176 65320 $$2Author$$atitanium compounds
000009176 7001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b1$$uFZJ
000009176 7001_ $$0P:(DE-HGF)0$$aRüdiger, A.$$b2
000009176 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
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