Home > Publications database > Investigation of the electroforming process in resistively switching TiO_2 nanocrosspoint junctions > print |
001 | 9176 | ||
005 | 20200423202714.0 | ||
024 | 7 | _ | |a 10.1063/1.3367752 |2 DOI |
024 | 7 | _ | |a WOS:000276077200045 |2 WOS |
024 | 7 | _ | |a 2128/17279 |2 Handle |
037 | _ | _ | |a PreJuSER-9176 |
041 | _ | _ | |a eng |
082 | _ | _ | |a 530 |
084 | _ | _ | |2 WoS |a Physics, Applied |
100 | 1 | _ | |a Nauenheim, C. |b 0 |u FZJ |0 P:(DE-Juel1)VDB61380 |
245 | _ | _ | |a Investigation of the electroforming process in resistively switching TiO_2 nanocrosspoint junctions |
260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
300 | _ | _ | |a 122902 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
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336 | 7 | _ | |a article |2 DRIVER |
440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |y 12 |v 96 |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
520 | _ | _ | |a We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively sputtered TiO2 thin film between Pt and Ti/Pt electrodes, respectively. As most resistance switching materials, TiO2 needs to be electroformed before it can be switched. This paper presents and compares current and voltage controlled electroforming with regard to the polarity. We show that a current-driven electroforming with negative polarities leads into the switchable high resistive state without need for a current compliance. These devices show an improved stability and reliability in bipolar resistive switching performance. |
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588 | _ | _ | |a Dataset connected to Web of Science |
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653 | 2 | 0 | |2 Author |a electrical conductivity transitions |
653 | 2 | 0 | |2 Author |a electrical resistivity |
653 | 2 | 0 | |2 Author |a electroforming |
653 | 2 | 0 | |2 Author |a metal-semiconductor-metal structures |
653 | 2 | 0 | |2 Author |a nanostructured materials |
653 | 2 | 0 | |2 Author |a platinum |
653 | 2 | 0 | |2 Author |a semiconductor thin films |
653 | 2 | 0 | |2 Author |a titanium |
653 | 2 | 0 | |2 Author |a titanium compounds |
700 | 1 | _ | |a Kügeler, C. |b 1 |u FZJ |0 P:(DE-Juel1)VDB15125 |
700 | 1 | _ | |a Rüdiger, A. |b 2 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Waser, R. |b 3 |u FZJ |0 P:(DE-Juel1)131022 |
773 | _ | _ | |a 10.1063/1.3367752 |g Vol. 96, p. 122902 |p 122902 |q 96<122902 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 96 |y 2010 |x 0003-6951 |
856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3367752 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/9176/files/1.3367752.pdf |y OpenAccess |
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