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000009225 084__ $$2WoS$$aElectrochemistry
000009225 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000009225 1001_ $$0P:(DE-HGF)0$$aRadtke, C.$$b0
000009225 245__ $$aPhysicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings
000009225 260__ $$aPennington, NJ$$bSoc.$$c2010
000009225 300__ $$aG37 - G39
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000009225 440_0 $$013562$$aElectrochemical and Solid State Letters$$v13$$x1099-0062$$y5
000009225 500__ $$aThe work at UFRGS and UCS was supported by MCT/CNPq, CAPES, and FAPERGS. The work at Juelich IBN1-IT was partially supported by Nanosil.
000009225 520__ $$a$LaLuO_3$ films deposited on Ge were submitted to different postoxidation annealings. Electrical characterization revealed that such treatments can have beneficial effects on the characteristics of the dielectric layer. Nevertheless, $LaLuO_3$ interface characteristics are modified depending on annealing parameters and mostly on the employed atmosphere. Electrical characterization was correlated with physicochemical properties of the resulting structures, evidencing that oxygen annealing, in certain conditions, promotes substrate oxidation. A more stable interface without the formation of excessive Ge oxidized species was achieved using $N_2$. 
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000009225 7001_ $$0P:(DE-HGF)0$$aKrug, C.$$b1
000009225 7001_ $$0P:(DE-HGF)0$$aSoares, G.V.$$b2
000009225 7001_ $$0P:(DE-HGF)0$$aBaumvol, I.J.R.$$b3
000009225 7001_ $$0P:(DE-Juel1)VDB64746$$aLopes, J. M. J.$$b4$$uFZJ
000009225 7001_ $$0P:(DE-Juel1)156578$$aDurgun Özben, E.$$b5$$uFZJ
000009225 7001_ $$0P:(DE-Juel1)VDB88502$$aNichau, A.$$b6$$uFZJ
000009225 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b7$$uFZJ
000009225 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b8$$uFZJ
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000009225 9201_ $$0I:(DE-Juel1)VDB799$$d31.12.2010$$gIBN$$kIBN-1$$lHalbleiter-Nanoelektronik$$x0
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