TY  - JOUR
AU  - Radtke, C.
AU  - Krug, C.
AU  - Soares, G.V.
AU  - Baumvol, I.J.R.
AU  - Lopes, J. M. J.
AU  - Durgun Özben, E.
AU  - Nichau, A.
AU  - Schubert, J.
AU  - Mantl, S.
TI  - Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings
JO  - Electrochemical and solid-state letters
VL  - 13
SN  - 1099-0062
CY  - Pennington, NJ
PB  - Soc.
M1  - PreJuSER-9225
SP  - G37 - G39
PY  - 2010
N1  - The work at UFRGS and UCS was supported by MCT/CNPq, CAPES, and FAPERGS. The work at Juelich IBN1-IT was partially supported by Nanosil.
AB  - $LaLuO_3$ films deposited on Ge were submitted to different postoxidation annealings. Electrical characterization revealed that such treatments can have beneficial effects on the characteristics of the dielectric layer. Nevertheless, $LaLuO_3$ interface characteristics are modified depending on annealing parameters and mostly on the employed atmosphere. Electrical characterization was correlated with physicochemical properties of the resulting structures, evidencing that oxygen annealing, in certain conditions, promotes substrate oxidation. A more stable interface without the formation of excessive Ge oxidized species was achieved using $N_2$. 
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000275660200012
DO  - DOI:10.1149/1.3322517
UR  - https://juser.fz-juelich.de/record/9225
ER  -