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@ARTICLE{Radtke:9225,
      author       = {Radtke, C. and Krug, C. and Soares, G.V. and Baumvol,
                      I.J.R. and Lopes, J. M. J. and Durgun Özben, E. and Nichau,
                      A. and Schubert, J. and Mantl, S.},
      title        = {{P}hysicochemical and {E}lectrical {P}roperties of
                      {L}a{L}u{O}3/{G}e(100) {S}tructures {S}ubmitted to
                      {P}ostdeposition {A}nnealings},
      journal      = {Electrochemical and solid-state letters},
      volume       = {13},
      issn         = {1099-0062},
      address      = {Pennington, NJ},
      publisher    = {Soc.},
      reportid     = {PreJuSER-9225},
      pages        = {G37 - G39},
      year         = {2010},
      note         = {The work at UFRGS and UCS was supported by MCT/CNPq, CAPES,
                      and FAPERGS. The work at Juelich IBN1-IT was partially
                      supported by Nanosil.},
      abstract     = {$LaLuO_3$ films deposited on Ge were submitted to different
                      postoxidation annealings. Electrical characterization
                      revealed that such treatments can have beneficial effects on
                      the characteristics of the dielectric layer. Nevertheless,
                      $LaLuO_3$ interface characteristics are modified depending
                      on annealing parameters and mostly on the employed
                      atmosphere. Electrical characterization was correlated with
                      physicochemical properties of the resulting structures,
                      evidencing that oxygen annealing, in certain conditions,
                      promotes substrate oxidation. A more stable interface
                      without the formation of excessive Ge oxidized species was
                      achieved using $N_2$.},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000275660200012},
      doi          = {10.1149/1.3322517},
      url          = {https://juser.fz-juelich.de/record/9225},
}