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| Home > Publications database > Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings > print |
| 001 | 9225 | ||
| 005 | 20180208233243.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1149/1.3322517 |
| 024 | 7 | _ | |2 WOS |a WOS:000275660200012 |
| 037 | _ | _ | |a PreJuSER-9225 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Electrochemistry |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 100 | 1 | _ | |a Radtke, C. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings |
| 260 | _ | _ | |a Pennington, NJ |b Soc. |c 2010 |
| 300 | _ | _ | |a G37 - G39 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Electrochemical and Solid State Letters |x 1099-0062 |0 13562 |y 5 |v 13 |
| 500 | _ | _ | |a The work at UFRGS and UCS was supported by MCT/CNPq, CAPES, and FAPERGS. The work at Juelich IBN1-IT was partially supported by Nanosil. |
| 520 | _ | _ | |a $LaLuO_3$ films deposited on Ge were submitted to different postoxidation annealings. Electrical characterization revealed that such treatments can have beneficial effects on the characteristics of the dielectric layer. Nevertheless, $LaLuO_3$ interface characteristics are modified depending on annealing parameters and mostly on the employed atmosphere. Electrical characterization was correlated with physicochemical properties of the resulting structures, evidencing that oxygen annealing, in certain conditions, promotes substrate oxidation. A more stable interface without the formation of excessive Ge oxidized species was achieved using $N_2$. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science, Pubmed |
| 700 | 1 | _ | |a Krug, C. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Soares, G.V. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Baumvol, I.J.R. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Lopes, J. M. J. |b 4 |u FZJ |0 P:(DE-Juel1)VDB64746 |
| 700 | 1 | _ | |a Durgun Özben, E. |b 5 |u FZJ |0 P:(DE-Juel1)156578 |
| 700 | 1 | _ | |a Nichau, A. |b 6 |u FZJ |0 P:(DE-Juel1)VDB88502 |
| 700 | 1 | _ | |a Schubert, J. |b 7 |u FZJ |0 P:(DE-Juel1)128631 |
| 700 | 1 | _ | |a Mantl, S. |b 8 |u FZJ |0 P:(DE-Juel1)VDB4959 |
| 773 | _ | _ | |a 10.1149/1.3322517 |g Vol. 13, p. G37 - G39 |p G37 - G39 |q 13 |t Electrochemical and solid-state letters |v 13 |y 2010 |x 1099-0062 |
| 909 | C | O | |o oai:juser.fz-juelich.de:9225 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2010 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2010 |g IBN |k IBN-1 |l Halbleiter-Nanoelektronik |0 I:(DE-Juel1)VDB799 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)118730 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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