%0 Journal Article
%A Roeckerath, M.
%A Lopes, J. M. J.
%A Durgun Özben, E.
%A Urban, C.
%A Schubert, J.
%A Mantl, S.
%A Jia, Y.
%A Schlom, D.G.
%T Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
%J Applied physics letters
%V 96
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-9226
%P 013513
%D 2010
%Z This work was partially supported by the European network of excellence "Nanosil" (Grant No. IST-216171).
%X Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm(2)/V center dot s was extracted.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000273473200069
%R 10.1063/1.3275731
%U https://juser.fz-juelich.de/record/9226