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000009226 084__ $$2WoS$$aPhysics, Applied
000009226 1001_ $$0P:(DE-Juel1)VDB64142$$aRoeckerath, M.$$b0$$uFZJ
000009226 245__ $$aInvestigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
000009226 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000009226 300__ $$a013513
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000009226 440_0 $$0562$$aApplied Physics Letters$$v96$$x0003-6951$$y1
000009226 500__ $$aThis work was partially supported by the European network of excellence "Nanosil" (Grant No. IST-216171).
000009226 520__ $$aTerbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm(2)/V center dot s was extracted.
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000009226 65320 $$2Author$$adielectric hysteresis
000009226 65320 $$2Author$$adielectric thin films
000009226 65320 $$2Author$$aelectron mobility
000009226 65320 $$2Author$$ainsulated gate field effect transistors
000009226 65320 $$2Author$$apermittivity
000009226 65320 $$2Author$$aRutherford backscattering
000009226 65320 $$2Author$$aterbium compounds
000009226 65320 $$2Author$$avacuum deposition
000009226 65320 $$2Author$$aX-ray diffraction
000009226 650_7 $$2WoSType$$aJ
000009226 7001_ $$0P:(DE-Juel1)VDB64746$$aLopes, J. M. J.$$b1$$uFZJ
000009226 7001_ $$0P:(DE-Juel1)156578$$aDurgun Özben, E.$$b2$$uFZJ
000009226 7001_ $$0P:(DE-Juel1)VDB76198$$aUrban, C.$$b3$$uFZJ
000009226 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b4$$uFZJ
000009226 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
000009226 7001_ $$0P:(DE-HGF)0$$aJia, Y.$$b6
000009226 7001_ $$0P:(DE-HGF)0$$aSchlom, D.G.$$b7
000009226 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3275731$$gVol. 96, p. 013513$$p013513$$q96<013513$$tApplied physics letters$$v96$$x0003-6951$$y2010
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