TY  - JOUR
AU  - Roeckerath, M.
AU  - Lopes, J. M. J.
AU  - Durgun Özben, E.
AU  - Urban, C.
AU  - Schubert, J.
AU  - Mantl, S.
AU  - Jia, Y.
AU  - Schlom, D.G.
TI  - Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
JO  - Applied physics letters
VL  - 96
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-9226
SP  - 013513
PY  - 2010
N1  - This work was partially supported by the European network of excellence "Nanosil" (Grant No. IST-216171).
AB  - Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm(2)/V center dot s was extracted.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000273473200069
DO  - DOI:10.1063/1.3275731
UR  - https://juser.fz-juelich.de/record/9226
ER  -