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@ARTICLE{Roeckerath:9226,
      author       = {Roeckerath, M. and Lopes, J. M. J. and Durgun Özben, E.
                      and Urban, C. and Schubert, J. and Mantl, S. and Jia, Y. and
                      Schlom, D.G.},
      title        = {{I}nvestigation of terbium scandate as an alternative gate
                      dielectric in fully depleted transistors},
      journal      = {Applied physics letters},
      volume       = {96},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-9226},
      pages        = {013513},
      year         = {2010},
      note         = {This work was partially supported by the European network
                      of excellence "Nanosil" (Grant No. IST-216171).},
      abstract     = {Terbium scandate thin films were deposited by e-gun
                      evaporation on (100) silicon substrates. Rutherford
                      backscattering spectrometry and x-ray diffraction studies
                      revealed homogeneous chemical compositions of the films. A
                      dielectric constant of 26 and CV-curves with small
                      hystereses were measured as well as low leakage current
                      densities of < 1 nA/cm(2). Fully depleted n-type
                      field-effect transistors on thin silicon-on-insulator
                      substrates with terbium scandate gate dielectrics were
                      fabricated with a gate-last process. The devices show
                      inverse subthreshold slopes of 80 mV/dec and a carrier
                      mobility for electrons of 225 cm(2)/V center dot s was
                      extracted.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000273473200069},
      doi          = {10.1063/1.3275731},
      url          = {https://juser.fz-juelich.de/record/9226},
}