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| Home > Publications database > Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors > print |
| 001 | 9226 | ||
| 005 | 20200423202715.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3275731 |2 DOI |
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| 037 | _ | _ | |a PreJuSER-9226 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB64142 |a Roeckerath, M. |b 0 |u FZJ |
| 245 | _ | _ | |a Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
| 300 | _ | _ | |a 013513 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 96 |x 0003-6951 |y 1 |
| 500 | _ | _ | |a This work was partially supported by the European network of excellence "Nanosil" (Grant No. IST-216171). |
| 520 | _ | _ | |a Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm(2)/V center dot s was extracted. |
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| 653 | 2 | 0 | |2 Author |a dielectric hysteresis |
| 653 | 2 | 0 | |2 Author |a dielectric thin films |
| 653 | 2 | 0 | |2 Author |a electron mobility |
| 653 | 2 | 0 | |2 Author |a insulated gate field effect transistors |
| 653 | 2 | 0 | |2 Author |a permittivity |
| 653 | 2 | 0 | |2 Author |a Rutherford backscattering |
| 653 | 2 | 0 | |2 Author |a terbium compounds |
| 653 | 2 | 0 | |2 Author |a vacuum deposition |
| 653 | 2 | 0 | |2 Author |a X-ray diffraction |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB64746 |a Lopes, J. M. J. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)156578 |a Durgun Özben, E. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB76198 |a Urban, C. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, J. |b 4 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB4959 |a Mantl, S. |b 5 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Jia, Y. |b 6 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schlom, D.G. |b 7 |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3275731 |g Vol. 96, p. 013513 |p 013513 |q 96<013513 |t Applied physics letters |v 96 |x 0003-6951 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3275731 |
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