TY  - JOUR
AU  - Linn, E.
AU  - Rosezin, R.
AU  - Kügeler, C.
AU  - Waser, R.
TI  - Complementary resistive switches for passive nanocrossbar memories Published online: 18 April 2010
JO  - Nature materials
VL  - 9
SN  - 1476-1122
CY  - Basingstoke
PB  - Nature Publishing Group
M1  - PreJuSER-9412
SP  - 403 - 406
PY  - 2010
N1  - The authors thank R. Soni for providing samples as well as T. Possinger and D. Leisten for assistance with graphical layout. The work was supported by the additional funding project Nanoarchitecture Laboratory of the Helmholtz Association, Germany.
AB  - On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits. As such they represent an interesting alternative to the conventional von Neumann based computer chip architectures. Crossbar architectures hold the promise of a significant reduction in energy consumption because of their ultimate scaling potential and because they allow for a local fusion of logic and memory, thus avoiding energy consumption by data transfer on the chip. However, the expected paradigm change has not yet taken place because the general problem of selecting a designated cell within a passive crossbar array without interference from sneak-path currents through neighbouring cells has not yet been solved satisfactorily. Here we introduce a complementary resistive switch. It consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:20400954
UR  - <Go to ISI:>//WOS:000276953500019
DO  - DOI:10.1038/nmat2748
UR  - https://juser.fz-juelich.de/record/9412
ER  -