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@ARTICLE{Linn:9412,
      author       = {Linn, E. and Rosezin, R. and Kügeler, C. and Waser, R.},
      title        = {{C}omplementary resistive switches for passive nanocrossbar
                      memories {P}ublished online: 18 {A}pril 2010},
      journal      = {Nature materials},
      volume       = {9},
      issn         = {1476-1122},
      address      = {Basingstoke},
      publisher    = {Nature Publishing Group},
      reportid     = {PreJuSER-9412},
      pages        = {403 - 406},
      year         = {2010},
      note         = {The authors thank R. Soni for providing samples as well as
                      T. Possinger and D. Leisten for assistance with graphical
                      layout. The work was supported by the additional funding
                      project Nanoarchitecture Laboratory of the Helmholtz
                      Association, Germany.},
      abstract     = {On the road towards higher memory density and computer
                      performance, a significant improvement in energy efficiency
                      constitutes the dominant goal in future information
                      technology. Passive crossbar arrays of memristive elements
                      were suggested a decade ago as non-volatile random access
                      memories (RAM) and can also be used for reconfigurable logic
                      circuits. As such they represent an interesting alternative
                      to the conventional von Neumann based computer chip
                      architectures. Crossbar architectures hold the promise of a
                      significant reduction in energy consumption because of their
                      ultimate scaling potential and because they allow for a
                      local fusion of logic and memory, thus avoiding energy
                      consumption by data transfer on the chip. However, the
                      expected paradigm change has not yet taken place because the
                      general problem of selecting a designated cell within a
                      passive crossbar array without interference from sneak-path
                      currents through neighbouring cells has not yet been solved
                      satisfactorily. Here we introduce a complementary resistive
                      switch. It consists of two antiserial memristive elements
                      and allows for the construction of large passive crossbar
                      arrays by solving the sneak path problem in combination with
                      a drastic reduction of the power consumption.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {610},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Materials Science, Multidisciplinary
                      / Physics, Applied / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:20400954},
      UT           = {WOS:000276953500019},
      doi          = {10.1038/nmat2748},
      url          = {https://juser.fz-juelich.de/record/9412},
}