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000943361 245__ $$aEffect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy
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000943361 7001_ $$0P:(DE-Juel1)191424$$aJin, Xuelin$$b2
000943361 7001_ $$0P:(DE-Juel1)128603$$aLepsa, M.$$b3
000943361 7001_ $$0P:(DE-Juel1)173621$$aZeng, Zheng$$b4
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000943361 7001_ $$0P:(DE-HGF)0$$aKardynał, BE$$b8$$eCorresponding author
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