Home > Publications database > Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy > print

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100 1 _ |a Fricker, D.
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245 _ _ |a Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy
260 _ _ |a Bristol
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700 1 _ |a Atkinson, P.
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700 1 _ |a Jin, Xuelin
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700 1 _ |a Lepsa, M.
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700 1 _ |a Zeng, Zheng
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700 1 _ |a Kovacs, Andras
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700 1 _ |a Kibkalo, Lidia
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700 1 _ |a Dunin-Borkowski, RE
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700 1 _ |a Kardynał, BE
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773 _ _ |a 10.1088/1361-6528/acabd1
|g Vol. 34, no. 14, p. 145601 -
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