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@INPROCEEDINGS{Hardtdegen:943410,
      author       = {Hardtdegen, Hilde and Mayer, Joachim and Mikulics, Martin},
      title        = {{B}eyond {C}urrent {A}chievements in {III}-{N}itride
                      nano-{LED} applications},
      reportid     = {FZJ-2023-00996},
      year         = {2022},
      abstract     = {Nano light emitting diodes (nano-LEDs) could play an
                      important role as key components for next generation on chip
                      optical communication, optical computing technologies,
                      highly resolved illumination microscopy, advanced “near”
                      field lithographical techniques and many others [1–3]. In
                      this contribution we will first provide a general outlook of
                      nano-LED technology related to its emerging applications in
                      green IT and the challenges facing nano-LED fabrication and
                      characteristics. Then we will present nano-LEDs integrated
                      into a vertical device layout serving as a testing platform
                      for correlative simultaneous Raman spectroscopy
                      investigations in a bottom-up configuration. The platform
                      enables the induction of structural / phase changes and
                      their simultaneous optical characterization. The nano-LEDs,
                      which emitted optical pulses in the range from ~20 ns up to
                      100 ns, are coupled with freestanding Ge1Sb2Te4
                      nano-membranes. The correlative studies reveal that the
                      nano-LEDs locally initialize substantial changes in the
                      nano-membrane phase i.e. state of the Ge1Sb2Te4. The
                      presented results demonstrate the suitability and
                      reliability of the vertically integrated nano-LEDs as a
                      testing platform and for driving future on chip integrated
                      electro-optic convertors. Hence, they represent a
                      significant step forwards towards future optical computing
                      techniques based on all optical switch/transmistor
                      devices.[1] M. Xie, Y. Jiang, X. Gao, W. Cai, J. Yuan, H.
                      Zhu, Y. Wang, X. Zeng, Z. Zhang, Y. Liu, and H. Amano, Adv.
                      Eng. Mater. 2100582 (2021).[2] N. Franch, J. Canals, V.
                      Moro, O. Alonso, S. Moreno, A. Vilà, J.D. Prades, J.
                      Gülink, H.S. Wasisto, A. Waag, and Á. Diéguez, in Nov.
                      Opt. Syst. Methods, Appl. XXII, edited by C.F. Hahlweg and
                      J.R. Mulley (SPIE, 2019), p. 23.[3] M. Mikulics, Z. Sofer,
                      A. Winden, S. Trellenkamp, B. Förster, J. Mayer, and H.H.
                      Hardtdegen, Nanoscale Adv. 2, 5421 (2020).},
      month         = {Oct},
      date          = {2022-10-09},
      organization  = {International Workshop on Nitride
                       Semiconductors, Berlin (Germany), 9 Oct
                       2022 - 14 Oct 2022},
      subtyp        = {After Call},
      cin          = {ER-C-2},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/943410},
}