Home > Publications database > Beyond Current Achievements in III-Nitride nano-LED applications > print |
001 | 943410 | ||
005 | 20230228121557.0 | ||
037 | _ | _ | |a FZJ-2023-00996 |
041 | _ | _ | |a English |
100 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 0 |e Corresponding author |u fzj |
111 | 2 | _ | |a International Workshop on Nitride Semiconductors |g IWN 2022 |c Berlin |d 2022-10-09 - 2022-10-14 |w Germany |
245 | _ | _ | |a Beyond Current Achievements in III-Nitride nano-LED applications |
260 | _ | _ | |c 2022 |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a Other |2 DataCite |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
336 | 7 | _ | |a conferenceObject |2 DRIVER |
336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1674732624_22925 |2 PUB:(DE-HGF) |x After Call |
520 | _ | _ | |a Nano light emitting diodes (nano-LEDs) could play an important role as key components for next generation on chip optical communication, optical computing technologies, highly resolved illumination microscopy, advanced “near” field lithographical techniques and many others [1–3]. In this contribution we will first provide a general outlook of nano-LED technology related to its emerging applications in green IT and the challenges facing nano-LED fabrication and characteristics. Then we will present nano-LEDs integrated into a vertical device layout serving as a testing platform for correlative simultaneous Raman spectroscopy investigations in a bottom-up configuration. The platform enables the induction of structural / phase changes and their simultaneous optical characterization. The nano-LEDs, which emitted optical pulses in the range from ~20 ns up to 100 ns, are coupled with freestanding Ge1Sb2Te4 nano-membranes. The correlative studies reveal that the nano-LEDs locally initialize substantial changes in the nano-membrane phase i.e. state of the Ge1Sb2Te4. The presented results demonstrate the suitability and reliability of the vertically integrated nano-LEDs as a testing platform and for driving future on chip integrated electro-optic convertors. Hence, they represent a significant step forwards towards future optical computing techniques based on all optical switch/transmistor devices.[1] M. Xie, Y. Jiang, X. Gao, W. Cai, J. Yuan, H. Zhu, Y. Wang, X. Zeng, Z. Zhang, Y. Liu, and H. Amano, Adv. Eng. Mater. 2100582 (2021).[2] N. Franch, J. Canals, V. Moro, O. Alonso, S. Moreno, A. Vilà, J.D. Prades, J. Gülink, H.S. Wasisto, A. Waag, and Á. Diéguez, in Nov. Opt. Syst. Methods, Appl. XXII, edited by C.F. Hahlweg and J.R. Mulley (SPIE, 2019), p. 23.[3] M. Mikulics, Z. Sofer, A. Winden, S. Trellenkamp, B. Förster, J. Mayer, and H.H. Hardtdegen, Nanoscale Adv. 2, 5421 (2020). |
536 | _ | _ | |a 5353 - Understanding the Structural and Functional Behavior of Solid State Systems (POF4-535) |0 G:(DE-HGF)POF4-5353 |c POF4-535 |f POF IV |x 0 |
700 | 1 | _ | |a Mayer, Joachim |0 P:(DE-Juel1)130824 |b 1 |u fzj |
700 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 2 |u fzj |
909 | C | O | |o oai:juser.fz-juelich.de:943410 |p VDB |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)125593 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)130824 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)128613 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Materials Systems Engineering |1 G:(DE-HGF)POF4-530 |0 G:(DE-HGF)POF4-535 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Materials Information Discovery |9 G:(DE-HGF)POF4-5353 |x 0 |
914 | 1 | _ | |y 2022 |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)ER-C-2-20170209 |k ER-C-2 |l Materialwissenschaft u. Werkstofftechnik |x 0 |
980 | _ | _ | |a conf |
980 | _ | _ | |a VDB |
980 | _ | _ | |a I:(DE-Juel1)ER-C-2-20170209 |
980 | _ | _ | |a UNRESTRICTED |
Library | Collection | CLSMajor | CLSMinor | Language | Author |
---|