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000943412 005__ 20230228121557.0
000943412 037__ $$aFZJ-2023-00998
000943412 041__ $$aEnglish
000943412 1001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b0$$eCorresponding author$$ufzj
000943412 1112_ $$aInternational Workshop on Nitride Semiconductors$$cBerlin$$d2022-10-09 - 2022-10-14$$gIWN 2022$$wGermany
000943412 245__ $$aTuning III-nitride nano-LEDs via laser-micro-annealing
000943412 260__ $$c2022
000943412 3367_ $$033$$2EndNote$$aConference Paper
000943412 3367_ $$2DataCite$$aOther
000943412 3367_ $$2BibTeX$$aINPROCEEDINGS
000943412 3367_ $$2DRIVER$$aconferenceObject
000943412 3367_ $$2ORCID$$aLECTURE_SPEECH
000943412 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1674732639_20257$$xAfter Call
000943412 520__ $$aConventional reactive ion etching (RIE) used for the space definition/formation of nano-LEDs leads to a significant decrease in their electroluminescence. Among all the technological approaches to boost the efficiency of micrometer and nano- sized LED structures, the precise local laser micro annealing (LMA) procedure exhibits still undiscovered potential. The main goal behind the application of the “LMA” procedure is to “adjust” and/or to “engineer” the emission intensity of nano-LEDs according to requirements for example in transmistor based optical computing architectures currently under development. Here in this work, we present correlative ̶  optical (micro electro- & photoluminescence, Raman spectroscopy) and electrical  ̶ characterization of single nano-LEDs in arrays integrated into a vertical device layout. Scanning electron microscopy investigations (figure 1) reveal inhomogeneous surface nano-LED morphology. Micro photoluminescence studies indicate that the LMA process has a direct impact on the curing of etching related defects. These are responsible for the suppression of radiative recombination in the nano-LED devices. Figure 2 presents a micro electroluminescence mapping after the successful “conditioning” procedure performed on nano-LEDs in an array with different annealing conditions. Furthermore, micro-Raman thermography investigations performed on single nano-LED structures (after LMA) disclose an up to 60K decrease in work temperature. Additionally, long-term operation electroluminescence measurements (up to 5000 hours) indicate that the LMA approach affects the nano-LEDs performance as well as device lifetime and reliability advantageously. The results presented demonstrate the suitability and reliability of the vertically integrated nano-LEDs conditioned locally/selectively by LMA as a key component for future on chip integrated electro-optic convertors. They could play an important role in the development of novel optical computing architectures based on transmistor/all optical switch units. 	 Figure 1: Scanning electron micrograph of a single nano-LED structure with its nickel cap (serving as the etching mask) after the RIE process. The “base” region of the nano-LED exhibits a “shallower” chemical/physical corrosion depth.	Figure 2: micro electroluminescence map-ping, after the “conditioning” procedure, performed on nano-LEDs in an array with different annealing conditions: non-locally annealed E0 and locally E1 and E2 annealed.
000943412 536__ $$0G:(DE-HGF)POF4-5353$$a5353 - Understanding the Structural and Functional Behavior of Solid State Systems (POF4-535)$$cPOF4-535$$fPOF IV$$x0
000943412 7001_ $$0P:(DE-HGF)0$$aKordos, Peter$$b1
000943412 7001_ $$0P:(DE-HGF)0$$aGregusova, D.$$b2
000943412 7001_ $$0P:(DE-HGF)0$$aWinden, A.$$b3
000943412 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b4
000943412 7001_ $$0P:(DE-Juel1)130824$$aMayer, Joachim$$b5$$ufzj
000943412 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b6$$ufzj
000943412 909CO $$ooai:juser.fz-juelich.de:943412$$pVDB
000943412 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich$$b0$$kFZJ
000943412 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130824$$aForschungszentrum Jülich$$b5$$kFZJ
000943412 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich$$b6$$kFZJ
000943412 9131_ $$0G:(DE-HGF)POF4-535$$1G:(DE-HGF)POF4-530$$2G:(DE-HGF)POF4-500$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF4-5353$$aDE-HGF$$bKey Technologies$$lMaterials Systems Engineering$$vMaterials Information Discovery$$x0
000943412 9141_ $$y2022
000943412 920__ $$lyes
000943412 9201_ $$0I:(DE-Juel1)ER-C-2-20170209$$kER-C-2$$lMaterialwissenschaft u. Werkstofftechnik$$x0
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