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@INPROCEEDINGS{Mikulics:943412,
      author       = {Mikulics, Martin and Kordos, Peter and Gregusova, D. and
                      Winden, A. and Sofer, Z. and Mayer, Joachim and Hardtdegen,
                      Hilde},
      title        = {{T}uning {III}-nitride nano-{LED}s via
                      laser-micro-annealing},
      reportid     = {FZJ-2023-00998},
      year         = {2022},
      abstract     = {Conventional reactive ion etching (RIE) used for the space
                      definition/formation of nano-LEDs leads to a significant
                      decrease in their electroluminescence. Among all the
                      technological approaches to boost the efficiency of
                      micrometer and nano- sized LED structures, the precise local
                      laser micro annealing (LMA) procedure exhibits still
                      undiscovered potential. The main goal behind the application
                      of the “LMA” procedure is to “adjust” and/or to
                      “engineer” the emission intensity of nano-LEDs according
                      to requirements for example in transmistor based optical
                      computing architectures currently under development. Here in
                      this work, we present correlative ̶ optical (micro electro-
                      $\&$ photoluminescence, Raman spectroscopy) and electrical
                      ̶ characterization of single nano-LEDs in arrays integrated
                      into a vertical device layout. Scanning electron microscopy
                      investigations (figure 1) reveal inhomogeneous surface
                      nano-LED morphology. Micro photoluminescence studies
                      indicate that the LMA process has a direct impact on the
                      curing of etching related defects. These are responsible for
                      the suppression of radiative recombination in the nano-LED
                      devices. Figure 2 presents a micro electroluminescence
                      mapping after the successful “conditioning” procedure
                      performed on nano-LEDs in an array with different annealing
                      conditions. Furthermore, micro-Raman thermography
                      investigations performed on single nano-LED structures
                      (after LMA) disclose an up to 60K decrease in work
                      temperature. Additionally, long-term operation
                      electroluminescence measurements (up to 5000 hours) indicate
                      that the LMA approach affects the nano-LEDs performance as
                      well as device lifetime and reliability advantageously. The
                      results presented demonstrate the suitability and
                      reliability of the vertically integrated nano-LEDs
                      conditioned locally/selectively by LMA as a key component
                      for future on chip integrated electro-optic convertors. They
                      could play an important role in the development of novel
                      optical computing architectures based on transmistor/all
                      optical switch units. Figure 1: Scanning electron micrograph
                      of a single nano-LED structure with its nickel cap (serving
                      as the etching mask) after the RIE process. The “base”
                      region of the nano-LED exhibits a “shallower”
                      chemical/physical corrosion depth. Figure 2: micro
                      electroluminescence map-ping, after the “conditioning”
                      procedure, performed on nano-LEDs in an array with different
                      annealing conditions: non-locally annealed E0 and locally E1
                      and E2 annealed.},
      month         = {Oct},
      date          = {2022-10-09},
      organization  = {International Workshop on Nitride
                       Semiconductors, Berlin (Germany), 9 Oct
                       2022 - 14 Oct 2022},
      subtyp        = {After Call},
      cin          = {ER-C-2},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/943412},
}