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@ARTICLE{Shen:9563,
author = {Shen, Wan. and Dittmann, R. and Waser, R.},
title = {{R}eversible alternation between bipolar and unipolar
resistive switching in polycrystalline barium strontium
titanate thin films},
journal = {Journal of applied physics},
volume = {107},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-9563},
pages = {094506},
year = {2010},
note = {Record converted from VDB: 12.11.2012},
abstract = {The alternation from bipolar to unipolar resistive
switching was observed in perovskite Ba0.7Sr0.3TiO3 thin
films. By controlling the switching voltage, either bipolar
or unipolar switching was obtained. When the switching
voltage is higher than a threshold voltage, the device
exhibits unipolar switching while if the switching voltage
is lower than a threshold voltage, the device shows bipolar
switching behavior. The bipolar-to-unipolar alternation is
dynamically repeatable and may be related to the local
modification of broken filaments by oxygen vacancy movement.
(c) 2010 American Institute of Physics.
[doi:10.1063/1.3369285]},
keywords = {J (WoSType)},
cin = {IFF-6 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000277834300538},
doi = {10.1063/1.3369285},
url = {https://juser.fz-juelich.de/record/9563},
}