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@ARTICLE{Reiche:9566,
      author       = {Reiche, M. and Kittler, M. and Buca, D. and Haehnel, A. and
                      Zhao, Q. T. and Mantl, S. and Gösele, U.},
      title        = {{S}elf-{O}rganized {S}i-{N}anotransistors},
      journal      = {Japanese journal of applied physics},
      volume       = {49},
      issn         = {0021-4922},
      address      = {Tokyo},
      publisher    = {Inst. of Pure and Applied Physics},
      reportid     = {PreJuSER-9566},
      pages        = {04DJ02},
      year         = {2010},
      note         = {This work was financially supported by the German Federal
                      Ministry of Education and Research in the framework of the
                      SiGe-TE project (contract no. 03X3541B).},
      abstract     = {The realization of defined dislocation networks by
                      hydrophobic wafer bonding allows the electrical
                      characterization of individual dislocations. The present
                      paper investigates the properties of such dislocations in
                      samples containing high dislocations densities down to only
                      six dislocations. The current induced by a single
                      dislocation is determined by extrapolation of the current
                      measured for various dislocation densities. Based on our
                      present and previously reported analyses the electronic
                      properties of individual dislocations can be inferred. The
                      investigations show that dislocations in the channel of
                      metal-oxide-semiconductor field-effect transistors (MOSFETs)
                      result in increasing drain currents even at low drain and
                      gate voltages. Because a maximum increase of the current is
                      obtained if a single dislocation is present in the channel,
                      arrays of MOSFETs each containing only one dislocation could
                      be realized on the nanometer scale. The distance of the
                      dislocations can be well controlled by wafer bonding
                      techniques. (C) 2010 The Japan Society of Applied Physics},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000277301300162},
      doi          = {10.1143/JJAP.49.04DJ02},
      url          = {https://juser.fz-juelich.de/record/9566},
}