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| 001 | 9566 | ||
| 005 | 20180208220922.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1143/JJAP.49.04DJ02 |
| 024 | 7 | _ | |2 WOS |a WOS:000277301300162 |
| 037 | _ | _ | |a PreJuSER-9566 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Reiche, M. |b 0 |
| 245 | _ | _ | |a Self-Organized Si-Nanotransistors |
| 260 | _ | _ | |a Tokyo |b Inst. of Pure and Applied Physics |c 2010 |
| 300 | _ | _ | |a 04DJ02 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 22861 |a Japanese Journal of Applied Physics |v 49 |x 0021-4922 |y 4 |
| 500 | _ | _ | |a This work was financially supported by the German Federal Ministry of Education and Research in the framework of the SiGe-TE project (contract no. 03X3541B). |
| 520 | _ | _ | |a The realization of defined dislocation networks by hydrophobic wafer bonding allows the electrical characterization of individual dislocations. The present paper investigates the properties of such dislocations in samples containing high dislocations densities down to only six dislocations. The current induced by a single dislocation is determined by extrapolation of the current measured for various dislocation densities. Based on our present and previously reported analyses the electronic properties of individual dislocations can be inferred. The investigations show that dislocations in the channel of metal-oxide-semiconductor field-effect transistors (MOSFETs) result in increasing drain currents even at low drain and gate voltages. Because a maximum increase of the current is obtained if a single dislocation is present in the channel, arrays of MOSFETs each containing only one dislocation could be realized on the nanometer scale. The distance of the dislocations can be well controlled by wafer bonding techniques. (C) 2010 The Japan Society of Applied Physics |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF) |a Grundlagen für zukünftige Informationstechnologien |c P42 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Kittler, M. |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)125569 |a Buca, D. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Haehnel, A. |b 3 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB5539 |a Zhao, Q. T. |b 4 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB4959 |a Mantl, S. |b 5 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Gösele, U. |b 6 |
| 773 | _ | _ | |0 PERI:(DE-600)2006801-3 |a 10.1143/JJAP.49.04DJ02 |g Vol. 49, p. 04DJ02 |p 04DJ02 |q 49<04DJ02 |t Japanese journal of applied physics |v 49 |x 0021-4922 |y 2010 |
| 909 | C | O | |o oai:juser.fz-juelich.de:9566 |p VDB |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK412 |a DE-HGF |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 914 | 1 | _ | |y 2010 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2010 |g IBN |k IBN-1 |l Halbleiter-Nanoelektronik |0 I:(DE-Juel1)VDB799 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)119486 |
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| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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